MoSys® 1T-SRAM™ Memory Silicon-Verified on Chartered Semiconductor Standard Logic Process

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"Chartered's silicon verification of the 1T-SRAM memory gives our customers access to a technology that passes the test of successful manufacturing. This reduces design risk and enhances the ability to create a system on a chip," said Ana Hunter, vice president of worldwide electronic design automation services at Chartered. "This alliance provides our customers with a seamless path from design to manufacturing, and enables creation of system-level devices using Mosys' high density memory architecture."

"Communications applications now require multi-megabits of high-performance memory with very stringent power budgets," stated Bob Merritt, senior analyst of Semico Research Corporation. "The memory on such ICs often occupies 40% to 60% of the chip area." By using embedded 1T-SRAM technology, designers can now economically integrate this memory on a standard logic process, without having to compromise the speed, density or power parameters.

"MoSys' 1T-SRAM embedded memory technology will allow Chartered's customers to achieve system-level integration with increased memory density and logic on the same chip," commented Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "We look forward to working with Chartered, its customers and its partners."

About MoSys 1T-SRAM
Available for certain processes in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond the density limits of six-transistor SRAMs; it also reduces much of the circuit complexity and extra cost associated with using embedded DRAM. In addition to the exceptional performance and density, this technology offers dramatic power consumption savings by using under a quarter of the power of traditional SRAM memories. 1T-SRAM technology is volume production proven in millions of MoSys' discrete memory devices.

About Chartered's Baseline Manufacturing Process Technology
The capability to design a system on silicon depends upon three major factors: the intellectual property (IP) and design methodologies used to create systems on a single chip, and the process technologies used in manufacturing.

Through agreements with EDA and IP companies like MoSys, Chartered has built a portfolio of libraries, IP cores, embedded memory blocks and tools that allow designers to create systems on chips. Each partner's IP, libraries and tools are integrated and verified through a full design flow. Only then are they proven in silicon through Chartered's test chip program. Once manufactured, characterized, verified and matched to Chartered's baseline CMOS manufacturing process, customers can mix and match elements within the same process generation (e.g., 0.18-micron). This technology strategy facilitates design reuse and systems-on-silicon enhancements from one design to the next so customers do not have to redesign existing features or change their existing design flow.

About Chartered
Chartered Semiconductor Manufacturing (Nasdaq: CHRT and SGX-ST: CHARTERED) is one of the world's leading independent foundries providing wafer fabrication services. Guided by the tenets of trust, service, partnership, advanced technology and stability, the Company aims to provide world-class semiconductor foundry services that enable customers to create and deliver market-leading system-level solutions. Chartered operates five fabrication facilities that serve high-growth, technologically advanced applications such as communications and networking. Headquartered in Singapore, Chartered employs approximately 3400 people at its 11 locations in North America, Asia and Europe.

Chartered completed its global initial public offering in October 1999 and is traded in the United States on Nasdaq and in Singapore on the Singapore Exchange Securities Trading Limited (SGX-ST). The Company reported 1999 net revenues of US $694.3 million.

About MoSys
MoSys, Inc. is the leading semiconductor technology company specializing in innovative, high performance, random access memories based on its patented 1T-SRAM architecture. Founded in 1991, the company develops innovative memory technology for licensing to semiconductor and systems companies. MoSys also uses this technology to produce its own memory products. The company's unique memory architecture has been proven in the volume production of over 30 million memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com/
Note to Investors
This news release contains forward-looking statements, as defined in the safe harbor provisions of the United States Private Securities Litigation Reform Act of 1995. These forward-looking statements relate to the silicon verification of the 0.18um test chip referred to herein and reflect Chartered's current views with respect to future events and are subject to certain risks and uncertainties, which could cause actual results to differ materially from historical results or those anticipated. Although Chartered believes the expectations reflected in such forward-looking statements are based upon reasonable assumptions, it can give no assurance that its expectations will be attained. A description of certain of the risks and uncertainties which could cause actual results to differ materially from those indicated in the forward-looking statements can be found in the section captioned "Risk Factors" in Chartered's Annual Report on Form 20-F filed with the U.S. Securities and exchange Commission. Chartered undertakes no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.

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