CHARTERED
DEMONSTRATES LOW-K SEMICONDUCTOR MANUFACTURING PROCESS
FOR HIGH-PERFORMANCE INTEGRATED CIRCUITS
Engineers integrate copper interconnects, low-k dielectric materials
in 0.13-micron silicon
SINGAPORE
and MILPITAS, Calif. - July 16, 2001 - Chartered Semiconductor
Manufacturing (Nasdaq: CHRT and SGX-ST: Chartered) today
announced a new copper, low-k process for the fabrication
of next-generation integrated circuits. The technology
is initially targeted at semiconductors for communications
applications such as high-performance optical networking
and broadband data transport systems, and is also expected
to be well suited for designs in computing and consumer
electronics. A key deliverable of an agreement with Agere
Systems to jointly develop manufacturing technologies,
the new technology is scheduled for manufacture at Chartered
as early as the first quarter of 2002.
Chartered has successfully integrated copper interconnects
with low-k dielectric materials in a 0.13-micron technology
and has demonstrated yield on a static random access memory
(SRAM) test vehicle. It is expected that the system performance
of chips can be improved by as much as 20 percent using
this copper, low-k fabrication process.
The layout rules applied to the SRAM demonstration vehicle
are approximately 5 to 10 percent tighter than current
foundry offerings at the 0.13-micron node, enabling designers
to realize six-transistor SRAMs with memory cells as small
as 1.97µm2. The SRAM was processed using five levels
of metal (up to eight are available) and employs state-of-
the-art argon fluoride lithography processing at several
critical levels.
"The integration and manufacturing of copper with
low-k dielectric materials is complex," said Dr.
John Martin, chief technology officer at Chartered. "Teams
of engineers spent the last 18 months characterizing the
performance, reliability and scalability of low-k materials
and are now developing a manufacturing process that enables
companies to build faster, more efficient systems on silicon.
We're extremely pleased with the results achieved to date,
and expect even better performance as the technology is
scaled to support the smaller physical dimensions of advanced
semiconductors. The technology provides for large and
fast memories, which, along with copper and low-k, are
highly desirable for the communications-networking market."
The
technology has been realized using copper metalization
and dielectrics systems provided by Novellus Systems.
The copper low-k scheme integrates Novellus's chemical
vapor deposition (CVD) low-k dielectric system with their
copper barrier/seed deposition, copper plating and polymer
removal systems. The dielectric constant of the CVD low-k
material, known as CORALTM, is in the range of 2.7 to
2.8. This is significantly lower than the 3.6 value offered
by currently available fluorinated silicate glass alternatives,
which translates to a reduction in interconnect delays
by as much as 20 percent.
"With
interconnect delays dominating the performance of many
of today's high-performance communications ICs, the advantage
offered by a five level copper interconnect and low-k
solution cannot be overstated," said Drs. Wilbert
van den Hoek, executive vice president, integration and
advanced development, Novellus Systems. "Chartered's
announcement marks an important milestone towards the
successful integration of copper and advanced low-k dielectrics,
offering a proven platform for addressing the system requirements
of leading applications at 0.13-micron and below."
About
Chartered
Chartered Semiconductor Manufacturing is one of the world's
top three silicon foundries. The Company's business model
is distinguished by its strategy to build trusted long-term
relationships, where manufacturing is part of a larger
customer-service focus that includes joint development
and implementation of new process technologies supporting
novel applications within the broad communications market.
Chartered operates five semiconductor fabrication facilities
at its Singapore headquarters, with a substantially completed
sixth fab that is in the process of being equipped as
a 300mm facility.
A Company with both global presence and perspective, Chartered
is traded on both the Nasdaq Stock Market in the United
States (Nasdaq: CHRT) and on the Singapore Exchange Securities
Trading Limited in Singapore (SGX-ST: CHARTERED). The
Company reported 2000 revenues of over US$1.1 billion.
More than 4,300 Chartered employees are based at 11 locations
around the world. Information about Chartered Semiconductor
Manufacturing can be found at www.charteredsemi.com
Chartered Safe Harbor Statement under the Provisions
of the United States Private Securities Litigation Reform
Act of 1995
This news release contains forward-looking statements,
as defined in the safe harbor provisions of the U.S. Private
Securities Litigation Reform Act of 1995. These forward-looking
statements, including without limitation, statements relating
to our collaborative efforts, qualification and production
plans in connection with the above-mentioned technology,
outlook for developments in the communications industry,
our technology roadmap and the appropriateness of our
business model and strategy, reflect our current views
with respect to future events, and are subject to certain
risks and uncertainties, which could cause actual results
to differ materially from historical results or those
anticipated. Among the factors that could cause actual
results to differ materially are: the difficulties, interruptions
or unforseen delays in the implementation of our collaborative
efforts, anticipated progress, qualification and production
plans, the introduction of new competing technologies,
or changes in market outlook and customer demand, specifically
in the foundry services and communications segments. Although
we believe the expectations reflected in such forward-looking
statements are based upon reasonable assumptions, we can
give no assurance that our expectations will be attained.
In addition to the foregoing factors, a description of
certain other risks and uncertainties which could cause
actual results to differ materially can be found in the
section captioned "Risk Factors" in our Annual
Report on Form 20-F filed with the U.S. Securities and
Exchange Commission. You are cautioned not to place undue
reliance on these forward-looking statements, which are
based on the current view of management on future events.
We undertake no obligation to publicly update or revise
any forward-looking statements, whether as a result of
new information, future events or otherwise.
