MOSYS 1T-SRAM-R MEMORY SILICON-VERIFIED
ON CHARTERED'S 0.13-MICRON STANDARD LOGIC PROCESS
Customers benefit from proven IP that reduces design risk,
enables greater complexity in design
SUNNYVALE and MILPITAS, Calif. - (July 21, 2003) MoSys, Inc. (NASDAQ: MOSY) the
industry's leading provider of advanced high density embedded memory solutions and
Chartered Semiconductor Manufacturing (NASDAQ: CHRT and SGX-ST: CHARTERED), one of
the world's top three dedicated semiconductor foundries, have announced that MoSys'
1T-SRAM-RÒ memory technology incorporating Transparent Error CorrectionÔ has been
silicon proven in Chartered's 0.13-micron baseline logic process.
This milestone rounds out MoSys' advanced high-density memory offering for Chartered's
leading-edge semiconductor manufacturing processes from 0.25-micron through 0.13-micron.
The availability of memory across these multiple technology nodes provides consistency
and reduces risk during design and manufacturing, and also allows companies to leverage
familiar, proven intellectual property (IP) building blocks as they migrate to smaller
geometries for consumer and communications products.
"Companies are dealing with increasingly complex design challenges as they face
increasing pressure to reduce design costs and hit market windows, and therefore
require design solutions that reduce risk and instill confidence," said Kevin Meyer,
vice president of worldwide marketing and services at Chartered. "Our ongoing joint
efforts with MoSys ensure that companies have access to advanced high-density embedded
memory options that are silicon validated for manufacturing with Chartered. These
collaborative efforts also support a full range of processes, giving our mutual
companies a proven, predictable path for migrating to smaller geometries for customers'
SoC designs."
"Our 1T-SRAM-R embedded memory technology continues to demonstrate its scalability and
portability, while improving yields, Soft Error Rate (SER) and reliability through the
built in Transparent Error Correction," commented Mark-Eric Jones, vice president and
general manager of intellectual property at MoSys, Inc. "MoSys' 1T-SRAM-R memory - which
has been silicon-verified with very high yields on Chartered's process - provides
Chartered customers with access to high-density 0.13-micron memory technology that
delivers the added benefit of simplifying production flow by eliminating laser repair."
ABOUT CHARTERED
Chartered Semiconductor Manufacturing, one of the world's top three dedicated semiconductor foundries, is forging a
customized approach to outsourced semiconductor manufacturing by building lasting and
collaborative partnerships with its customers. The Company provides flexible and
cost-effective manufacturing solutions for customers, enabling the convergence of
ommunications, computing and consumer markets. In Singapore, Chartered operates five
fabrication facilities and has a sixth fab, which will be developed as a 300mm facility.
A company with both global presence and perspective, Chartered is traded on both the
Nasdaq Stock Market (Nasdaq: CHRT) and on the Singapore Exchange (SGX-ST: CHARTERED).
Chartered's 3,500 employees are based at 11 locations around the world. Information
about Chartered can be found at www.charteredsemi.com.
ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory
technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a
combination of high density, low power consumption, high speed and low cost unmatched
by other available memory technologies. The single transistor bit cell used in 1T-SRAM
memory results in the technology achieving much higher density than traditional four or
six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high
performance for random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by a factor of
four compared with traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys' licensees have
shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating
the excellent manufacturability of the technology in a wide range of silicon processes
and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California
94085. More information is available on MoSys' website at http://www.mosys.com.
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
Chartered Safe Harbour Statement under the provisions of the United States Private Securities Litigation Reform Act of 1995
This news release may contain forward-looking statements, as defined in the safe harbour provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements reflect our current views with respect to future events, and are subject to certain risks and uncertainties, which could cause actual results to differ materially from historical results or those anticipated. For example: changes in market outlook; the rate of semiconductor market recovery; economic conditions in the United States as well as globally; customer demands; the performance level of our fabrication facilities; the successful implementation of our joint efforts with MoSys and competition. Although we believe the expectations reflected in such forward-looking statements are based upon reasonable assumptions, we can give no assurance that our expectations will be attained. In addition to the foregoing factors, a description of certain other risks and uncertainties which could cause actual results to differ materially can be found in the section captioned "Risk Factors" in our Annual Report on Form 20-F filed with the U.S. Securities and Exchange Commission. You are cautioned not to place undue reliance on these forward-looking statements, which are based on the current view of management on future events. We undertake no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.
