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RF CMOS/Mixed Signal
Mixed Signal and RFCMOS Process Overview
Transistors
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0.60µm |
0.35µm |
0.25µm |
0.18µm |
0.13µm |
| Supply Voltage (V) |
5.0 |
3.3 |
2.5/3.3 |
1.8/3.3 |
1.2/2.5,
3.3 |
| Gate Oxide Thickness (Å), Gate Stack |
125, WSiX |
65,
TiSi2 |
43/65,
TiSi2 |
30/63,
CoSi2 |
20/45, 65, CoSi2 |
| Isolation |
LOCOS |
STI |
| Metal, Dielectric |
3 Al Layer, SiO2 |
4 Al Layer, SiO2 |
5 Al Layer, SiO2 |
6 Al Layer, SiO2 |
8 Cu Layer,
F-TEOS/low-k |
| Core x´ tor Vt_n, Vt_p (V) |
0.80, -0.85 |
0.60, -0.75 |
0.57, -0.57 |
0.48, -0.48 |
0.34, -0.36 |
| Core Low-Vt x´ tor Vt_n, Vt_p (V) |
No |
Available
upon request |
0.33, -0.25 |
0.27,
-0.30 |
0.24,
-0.27 |
| Core Native-Vt NMOS Vt (V) |
No |
Available
upon request |
Available
upon request |
0.12 |
0.118 (1.2V)
|
| NMOS fT (GHz) |
No |
27(Vds = 3.0V) |
39(Vds = 2.5V) |
60(Vds = 1.8V) |
80(Vds = 1.2V) |
| NMOS fMAX (GHz) |
No |
35(Vds = 3.0V) |
44(Vds = 2.5V) |
80(Vds
= 1.8V) |
>100(Vds
= 1.2V) |
| PMOS fT (GHz) |
No |
15(Vds = 3.0V) |
20(Vds = 2.5V) |
23(Vds = 1.8V) |
40(Vds
= 1.2V) |
| PMOS fMAX (GHz) |
No |
20(Vds = 3.0V) |
23(Vds = 2.5V) |
38(Vds
= 1.8V) |
60(Vds
= 1.2V) |
| Core NMOS NFmin @ 2.45GHz(dB) |
No |
1.9(Vds = 2V,
Vgs = 1V) |
1.6(Vds = 2.5V,
Vgs = 1V) |
1.4(Vds = 1.8V,
Vgs = 0.8V) |
=<1.4(Vds = 1.2V,
Vgs = 0.6V) |
| Deep N-well |
No |
Yes |
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Mixed Signal and RFCMOS Process Overview
Passive Components
| Key Specifications |
0.60µm |
0.35µm |
0.25µm |
0.18µm |
0.13µm |
| Supply Voltage (V) |
5.0 |
3.3 |
2.5/3.3 |
1.8/3.3 |
1.2/2.5,
3.3 |
| Metal, Dielectric |
3 Al Layer, SiO2 |
4 Al Layer, SiO2 |
5 Al Layer, SiO2 |
6 Al Layer, SiO2 |
8 Cu Layer,
F-TEOS/low-k |
| PIP Cap (fF/µm²) |
0.63 |
1.25 |
1.55 |
No |
No |
| Gate PIS Cap Capacitance (fF/µm²) |
No |
6(2.5V PMOS)
4.0(3.3V PMOS) |
4.0(3.3V PMOS) |
5.5(2.5V
PMOS)
5.0(3.3V PMOS) |
| MIM Cap Capacitance (fF/µm²) |
No |
0.375 |
1.15 |
1.0 |
1.0 |
| N-well Resistor (ohm/sq) |
900 |
660 (3.3V)
|
680 |
660 |
1200 |
| N+ Resistor (ohm/sq) |
65 |
100 |
60 |
78 |
73 |
| P+ Resistor (ohm/sq) |
110 |
210 |
120 |
115 |
146 |
| N+ Poly Resistor (ohm/sq) |
27 |
65 |
65 |
85 |
220 |
| P+ Poly Resistor (ohm/sq) |
No |
330 |
330 |
320 |
| High Sheet-Resistance Poly Resistor (ohm/sq) |
1000 |
| Spiral Inductors |
No |
0.8µm |
2µm |
2µm |
3µm
Cu |
| Varactors |
No |
MOS/PN |
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Revised: 03/17/2004
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